Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 8.8A
Rds On (Max) @ Id, Vgs 294 mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 13.3nC @ 10V
Input Capacitance (Ciss) @ Vds 657pF @ 30V
Power - Max 50W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad