Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) @ Vgs 2.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 43pF @ 10V
Power - Max 265mW
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad