MOSFET, N CH, 30V, 3.4A, 8-SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Operating Te
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.4A
Rds On (Max) @ Id, Vgs 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs 6nC @ 10V
Input Capacitance (Ciss) @ Vds 250pF @ 20V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)