Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 30.7A (Tc)
Rds On (Max) @ Id, Vgs 30 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 26.6nC @ 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 20V
Power - Max 62.5W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad