Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10.9A
Rds On (Max) @ Id, Vgs 20 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 15.3nC @ 5V
Input Capacitance (Ciss) @ Vds 950pF @ 10V
Power - Max 4.17W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)