Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 28V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Rds On (Max) @ Id, Vgs 8 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 23nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2400pF @ 16V
Power - Max 930mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)