Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10.2A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 31nC @ 10V
Input Capacitance (Ciss) @ Vds 2516pF @ 15V
Power - Max 920mW
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad (5 Lead)