Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta)
Rds On (Max) @ Id, Vgs 13 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) @ Vds 735pF @ 24V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad (5 Lead)