Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Rds On (Max) @ Id, Vgs 95 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 4.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 360pF @ 10V
Power - Max 770mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)