Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tj)
Rds On (Max) @ Id, Vgs 25 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 30nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2400pF @ 6.4V
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead