Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 15.7A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs 3.6 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 49.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4600pF @ 12V
Power - Max 1.43W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA