Transistor: P-MOSFET; unipolar; -30V; -5.9A; 3W; S
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.9A
Rds On (Max) @ Id, Vgs 50 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) @ Vds 950pF @ 15V
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Buying Option 1
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INR 915
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Order Multiple:1
Price : 915