Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) @ Vds 5550pF @ 25V
Power - Max 1.5W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA