MOSFET, P-CH, 12V, WSMINI6-F1-B; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-650mV; Power Dissipation Pd:700mW; Transistor Case Style:WSMini6-F1-B; No. of Pins:6;
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 34 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 1400pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Buying Option 1
1
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INR 372.1
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 372.1