Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Rds On (Max) @ Id, Vgs 40 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 1200pF @ 10V
Power - Max 500mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323