Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Rds On (Max) @ Id, Vgs 99 mOhm @ 9.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 22.4nC @ 5V
Input Capacitance (Ciss) @ Vds 1064pF @ 25V
Power - Max 75W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63