Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Rds On (Max) @ Id, Vgs 150 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 3.9nC @ 10V
Input Capacitance (Ciss) @ Vds 172pF @ 10V
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads