Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Rds On (Max) @ Id, Vgs 2.3 Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 23.7nC @ 5V
Input Capacitance (Ciss) @ Vds 645pF @ 25V
Power - Max 100W
Mounting Type Through Hole
Package / Case TO-220-3