Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Rds On (Max) @ Id, Vgs 24 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) @ Vgs 500nC @ 10V
Input Capacitance (Ciss) @ Vds 23000pF @ 25V
Power - Max 960W
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA