Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 85V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Rds On (Max) @ Id, Vgs 7 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) @ Vgs 320nC @ 10V
Input Capacitance (Ciss) @ Vds 9100pF @ 25V
Power - Max 400W
Mounting Type Through Hole
Package / Case -