Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Rds On (Max) @ Id, Vgs 1.44 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) @ Vds 1890pF @ 25V
Power - Max 200W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA