Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 230A (Tc)
Rds On (Max) @ Id, Vgs 4.7 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) @ Vgs 250nC @ 10V
Input Capacitance (Ciss) @ Vds 15300pF @ 25V
Power - Max 650W
Mounting Type Through Hole
Package / Case TO-247-3