Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Rds On (Max) @ Id, Vgs 33 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) @ Vgs 155nC @ 10V
Input Capacitance (Ciss) @ Vds 5200pF @ 25V
Power - Max 230W
Mounting Type Through Hole
Package / Case -