Transistor: N-MOSFET; unipolar; HEXFET; 30V; 160A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Rds On (Max) @ Id, Vgs 3.1 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) @ Vgs 59nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4880pF @ 15V
Power - Max 135W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB