Transistor: N-MOSFET; unipolar; HEXFET; 25V; 81A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 81A (Tc)
Rds On (Max) @ Id, Vgs 5.7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1470pF @ 13V
Power - Max 63W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA