Transistor: N-MOSFET; unipolar; HEXFET; 100V; 63A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A
Rds On (Max) @ Id, Vgs 14 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) @ Vgs 48nC @ 4.5V
Input Capacitance (Ciss) @ Vds 3980pF @ 25V
Power - Max 140W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63