Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Rds On (Max) @ Id, Vgs 165 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 2.4V @ 10µA
Gate Charge (Qg) @ Vgs 2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 160pF @ 25V
Power - Max 1.25W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3