Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Rds On (Max) @ Id, Vgs 220 mOhm @ 1.15A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 5V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max 2.7W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA