Transistor: N-MOSFET; unipolar; HEXFET; 30V; 4.6A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Rds On (Max) @ Id, Vgs 31 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) @ Vds 840pF @ 25V
Power - Max 1W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA