Transistor: N-MOSFET; unipolar; HEXFET; 30V; 3.6A;
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.6A
Rds On (Max) @ Id, Vgs 63 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10µA
Gate Charge (Qg) @ Vgs 2.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 270pF @ 25V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad