Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 50µA
Gate Charge (Qg) @ Vgs 62nC @ 4.5V
Input Capacitance (Ciss) @ Vds 3170pF @ 25V
Power - Max 2.7W
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad