Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 185A (Tc)
Rds On (Max) @ Id, Vgs 4 mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 140nC @ 4.5V
Input Capacitance (Ciss) @ Vds 7660pF @ 25V
Power - Max 300W
Mounting Type Through Hole
Package / Case -