Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 89A (Tc)
Rds On (Max) @ Id, Vgs 10 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 98nC @ 5V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max 3.8W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA