Transistor: N-MOSFET; unipolar; HEXFET; 40V; 160A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Rds On (Max) @ Id, Vgs 4 mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 140nC @ 5V
Input Capacitance (Ciss) @ Vds 6590pF @ 25V
Power - Max 200W
Mounting Type Through Hole
Package / Case TO-220-3