Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Rds On (Max) @ Id, Vgs 125 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) @ Vds 900pF @ 25V
Power - Max 110W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB