MOSFET, N-CH, 40V, 195A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:230W; Transistor Case Style:TO-262; No. of Pins:3; Operating T
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Rds On (Max) @ Id, Vgs 1.8 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150µA
Gate Charge (Qg) @ Vgs 225nC @ 10V
Input Capacitance (Ciss) @ Vds 7330pF @ 25V
Power - Max 230W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA