Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Rds On (Max) @ Id, Vgs 2.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100µA
Gate Charge (Qg) @ Vgs 135nC @ 10V
Input Capacitance (Ciss) @ Vds 4730pF @ 25V
Power - Max 208W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB