Transistor: N-MOSFET; unipolar; HEXFET; 100V; 59A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Rds On (Max) @ Id, Vgs 25 mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) @ Vgs 114nC @ 10V
Input Capacitance (Ciss) @ Vds 2450pF @ 25V
Power - Max 3.8W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB