Transistor: N-MOSFET; unipolar; HEXFET; 100V; 190A
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 190A (Tc)
Rds On (Max) @ Id, Vgs 4 mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 230nC @ 10V
Input Capacitance (Ciss) @ Vds 9830pF @ 50V
Power - Max 380W
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB