Transistor: N-MOSFET; unipolar; HEXFET; 55V; 59A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 44nC @ 10V
Input Capacitance (Ciss) @ Vds 1380pF @ 25V
Power - Max 110W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63