Transistor: N-MOSFET; unipolar; HEXFET; 60V; 200A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Rds On (Max) @ Id, Vgs 3 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) @ Vds 6540pF @ 50V
Power - Max 280W
Mounting Type Through Hole
Package / Case TO-247-3