FET Type | MOSFET N-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 9.3nC @ 10V |
Input Capacitance (Ciss) @ Vds | 225pF @ 25V |
Power - Max | 3.1W |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |