Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 9.3nC @ 10V
Input Capacitance (Ciss) @ Vds 225pF @ 25V
Power - Max 3.1W
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Buying Option 1
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INR 286.7
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 286.7