Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Rds On (Max) @ Id, Vgs 2 Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 10.5nC @ 10V
Input Capacitance (Ciss) @ Vds 275pF @ 25V
Power - Max 1.8W
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads