Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 1.13A (Tc)
Rds On (Max) @ Id, Vgs 800 mOhm @ 570mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) @ Vds 390pF @ 25V
Power - Max 2.4W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA