Transistor: P-MOSFET; unipolar; HEXFET; -30V; -13A
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs 37 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25µA
Gate Charge (Qg) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) @ Vds 580pF @ 25V
Power - Max 2.1W
Mounting Type Surface Mount
Package / Case 6-PowerVQFN