Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs 14.6 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25µA
Gate Charge (Qg) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) @ Vds 1543pF @ 25V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case 8-PowerVQFN