Transistor: N-MOSFET; unipolar; HEXFET; 30V; 27A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs 3.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA
Gate Charge (Qg) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) @ Vds 3180pF @ 10V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN