Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 19A (Ta)
Rds On (Max) @ Id, Vgs 5.2 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.6V @ 150µA
Gate Charge (Qg) @ Vgs 54nC @ 10V
Input Capacitance (Ciss) @ Vds 2320pF @ 50V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN