Transistor: N-MOSFET; unipolar; HEXFET; 60V; 11A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs 14.4 mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) @ Vds 1256pF @ 25V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-PowerVQFN