Transistor: N-MOSFET; unipolar; HEXFET; 150V; 5A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs 58 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 50V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad